JPS62516B2 - - Google Patents
Info
- Publication number
- JPS62516B2 JPS62516B2 JP4818878A JP4818878A JPS62516B2 JP S62516 B2 JPS62516 B2 JP S62516B2 JP 4818878 A JP4818878 A JP 4818878A JP 4818878 A JP4818878 A JP 4818878A JP S62516 B2 JPS62516 B2 JP S62516B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- circuit
- write
- thin film
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 33
- 239000003990 capacitor Substances 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Control Of El Displays (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4818878A JPS54140428A (en) | 1978-04-21 | 1978-04-21 | Circuit system for thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4818878A JPS54140428A (en) | 1978-04-21 | 1978-04-21 | Circuit system for thin film el element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54140428A JPS54140428A (en) | 1979-10-31 |
| JPS62516B2 true JPS62516B2 (en]) | 1987-01-08 |
Family
ID=12796404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4818878A Granted JPS54140428A (en) | 1978-04-21 | 1978-04-21 | Circuit system for thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54140428A (en]) |
-
1978
- 1978-04-21 JP JP4818878A patent/JPS54140428A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54140428A (en) | 1979-10-31 |
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